6HC-SiC Schottky diode edge terminated using amorphous SiC by sputterning method

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Title	6HC-SiC Schottky diode edge terminated using amorphous SiC by sputterning method
Author	Matsumoto K.
Co-authors	Chen Y.
	Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Nishino S.

Source document	Materials Science Forum. Vol. 264-268 (1998), p. 925-928
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	PORRO, S. - CIECHONSKI, R.R. - SYVAJARVI, M. - YAKIMOVA, R. Electrical analysis and interface states evaluation of Ni Schottky diodes on 4H-SiC thick epilayers. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 0031-8965, OCT 2005, vol. 202, no. 13, p. 2508-2514.
	CIECHONSKI, R.R. - PORRO, S. - SYVAJARVI, M. - YAKIMOVA, R. Evaluation of on-state resistance and boron-related levels in n-type 4H-SiC. SILICON CARBIDE AND RELATED MATERIALS 2004. ISSN 0255-5476, 2005, vol. 483, p. 425-428.
	ZHANG, J.Y. - HARRELL, W.R. Analysis of the I-V characteristics of Al/4H-SiC Schottky diodes. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. ISSN 1071-1023, MAR-APR 2003, vol. 21, no. 2, p. 872-878.
	HARRELL, W.R. - ZHANG, J.Y. - POOLE, K.F. Aluminum Schottky contacts to n-type 4H-SiC. JOURNAL OF ELECTRONIC MATERIALS. ISSN 0361-5235, OCT 2002, vol. 31, no. 10, p. 1090-1095.
Category	ADE
Year	1998

article

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
1998

Number of the records: 1