Metal oxide/silicon oxide multilayer with smooth interfaces produced by in situ controlled plasma-enhanced MOCVD

Number of the records: 1

Title	Metal oxide/silicon oxide multilayer with smooth interfaces produced by in situ controlled plasma-enhanced MOCVD
Author	Hamelmann F.
Co-authors	Haindl G.
	Schmalhorst J.
	Aschentrup A.
	Majková Eva 1950 SAVFYZIK - Fyzikálny ústav SAV ^ORCID
	Kleineberg U.
	Heinzmann U.
	Klipp A.
	Jutzi P.
	Anopchenko A.S. SAVFYZIK - Fyzikálny ústav SAV
	Jergel Matej 1954- SAVFYZIK - Fyzikálny ústav SAV ^SCOPUS ^RID ^ORCID
	Luby Štefan 1941 SAVFYZIK - Fyzikálny ústav SAV

Source document	Thin Solid Films. Vol. 358 (2000), p. 90-93
Language	eng - English
Country	NL - Netherlands
Document kind	rozpis článkov z periodík (rbx)
Citations	JUTZI, P - REUMANN, G. Cp* Chemistry of main-group elements. In JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, 2000, vol., no. 14, pp. 2237-2244. ISSN 1472-7773. Dostupné na: https://doi.org/10.1039/b001365j.
	YANG, Zehua - ZHU, Jingtao - ZHU, Yunping - LUO, Hongxin - LI, Zhongliang - JIANG, Hui - ZHAO, Li. Asymmetric interface and growth mechanism in sputtered W/Si and WSi2/Si multilayers. In APPLIED SURFACE SCIENCE, 2022, vol. 604. ISSN 0169-4332. Dostupné na: https://doi.org/10.1016/j.apsusc.2022.154531.
Category	ADC
Year	2000
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1016/S0040-6090(99)00695-1

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2000	1999	1.100

Number of the records: 1