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Fabrication of open stencil masks with asymmetric void ratio for the ion projection lithography space charge experiment

  1. TitleFabrication of open stencil masks with asymmetric void ratio for the ion projection lithography space charge experiment
    Author Volland B.
    Co-authors Shi F.

    Heerlein H.

    Rangelow I.W.

    Hudek Peter 1953- SAVINFO - Ústav informatiky SAV    SCOPUS    RID    ORCID

    Kostič Ivan 1955- SAVINFO - Ústav informatiky SAV    SCOPUS    RID    ORCID

    Cekan E.

    Vonach H.

    Loeschner Hans

    Horner C.

    Stengl G.

    Buschbeck H.

    Zeininger M.

    Bleeker A.

    Benschop J.

    Source document Journal of Vacuum Science and Technology B. Vol. 18, no. 6 (2000), p. 3202-3206
    Languageeng - English
    CountryUS - United States of America
    Document kindrozpis článkov z periodík (rbx)
    CitationsSOHDA, Y - OHTA, H - SAITOU, N. A method for evaluating aberration in the crossover image in mask irradiation optics of electron beam. In REVIEW OF SCIENTIFIC INSTRUMENTS. ISSN 0034-6748, 2002, vol. 73, no. 2, pp. 270.
    KASSING, Rainer. Semiconductor. In FESTKORPER, 2005, vol., no., pp. 543.
    TSENG, AA. Recent developments in nanofabrication using ion projection lithography. In SMALL. ISSN 1613-6810, 2005, vol. 1, no. 6, pp. 594.
    TSENG, Ampere A. - DU, Zuliang - NOTARGIACOMO, Andrea - JOU, Shyankay. Nanoscale fabrication. In Microsystems and Nanotechnology, 2012-08-01, 9783642182938, pp. 513-577.
    CategoryADC
    Year2000
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1116/1.1319688
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    200019991.690
Number of the records: 1  

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