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DLTS, ODLTS and MCTS study of deep traps in the VPE GaAs Schottky barriers

  1. TitleDLTS, ODLTS and MCTS study of deep traps in the VPE GaAs Schottky barriers
    Author Dubecký František 1946 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Šafránková Jaroslava SAVELEK - Elektrotechnický ústav SAV

    Olejníková Božena SAVELEK - Elektrotechnický ústav SAV

    Szentpali B.

    Source document / Lendway E. . P. 147-152 Gallium Arsenide : Proceedings of the Second Conference on Physics and Technology of GaAs and other III-V Semiconductors. - Aedermannsdorf : Trans. Techn. Publications, 1987
    Languageeng - English
    CountryCH - Switzerland
    Document kindrozpis článkov z periodík (rzb)
    UDC536.425
    KeywordsGaAs - vlastnosti elektrické * bariery Schottky * Elektrotechnika slaboprúdová
    CitationsSTUCHLIKOVA, L. - GAZI, M. In CZECHOSLOVAK JOURNAL OF PHYSICS. ISSN 0011-4626, AUG 1994, vol. 44, no. 8, p. 745-752.
    STUCHLIKOVA, L. - HARMATHA, L. - NAGL, V. - GAZI, M. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. ISSN 0031-8965, JUL 16 1993, vol. 138, no. 1, p. 241-248.
    SIYANBOLA, W.O. - PALMER, D.W. In SOLID STATE COMMUNICATIONS. ISSN 0038-1098, APR 1990, vol. 74, no. 3, p. 209-213.
    CategoryAEC - Scientific papers in foreign peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year1987
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    1987
Number of the records: 1  

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