Conduction-band discontinuities of strained and unstrained  - layer InxGa1-xAs/GaAs and InxGa1-xAs/inP heterojunctions and quantum wells

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Title	Conduction-band discontinuities of strained and unstrained - layer InxGa1-xAs/GaAs and InxGa1-xAs/inP heterojunctions and quantum wells
Author	Hrivnák Ľubomír SAVELEK - Elektrotechnický ústav SAV
Source document	Physica Status Solidi A. Vol. 124, (1991), p. K111
Language	eng - English
Country	GR - Greece
Document kind	rozpis článkov z periodík (rbx)
Keywords	InxGa1-xAs/GaAs * InxGa1-xAs/InP
Citations	VURGAFTMAN, I. - MEYER, J.R. - RAM-MOHAN, L.R. JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, JUN 1 2001, vol. 89, no. 11, Part 1, p. 5815-5875.
	PELA, R.R. - TELES, L.K. - MARQUES, M. - MARTINI, S. In JOURNAL OF APPLIED PHYSICS. JAN 21 2013, vol. 113, no. 3.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	1991

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
1991

Number of the records: 1