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Pb/Si(111)1x1-H Schottky barrier height
Title Pb/Si(111)1x1-H Schottky barrier height Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Hricovíni K. Le Lay G. Aristov V.Y. Source document Fizika A. Vol. 4 (1995), p. 191-197 Language eng - English Country CV - Cape Verde Document kind rozpis článkov z periodík (rbx) Keywords bariéry Schottky * Pb/Si(111)1x1-H * výskum základný Citations HORVATH, Z.J. VACUUM. ISSN 0042-207X, AUG-OCT 1995, vol. 46, no. 8-10, p. 963-966. THEBE, M.J. - MOLOI, S.J. - MSIMANGA, M. Changes in electrical properties and conduction mechanisms of Pd/n-Si diodes due to niobium dopant. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. ISSN 0921-5107, NOV 2021, vol. 273. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 1995 article
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 1995
Number of the records: 1