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Ru and RuO2 gate electrodes for advanced CMOS technology
Title Ru and RuO2 gate electrodes for advanced CMOS technology Author Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV Machajdík Daniel SAVELEK - Elektrotechnický ústav SAV Hooker J.C. Perez N. Fanciulli M. Ferrari S. Wiemer C. Dimoulas A. Vellianitis G. Roozeboom F. Source document Materials Science and Engineering, B - Solid-State Materials for Advanced Technology. Vol. 109, (2004), p. 117–121 Language eng - English Country NL - Netherlands Document kind rozpis článkov z periodík (rbx) Citations Hur'yeva, Tetyana Lisker, Marco Burte, Edmund P.CHEMICAL VAPOR DEPOSITION. JUL 2006, vol. 12, no. 7, p. 429-434. LU, Y.K. - ZHU, W. - CHEN, X.F. - GOPALKRISHNAN, R. MICROELECTRONIC ENGINEERING. FEB 2006, vol. 83, no. 2, p. 371-375. Deweerd, W., Schram, T., Van Hoornick, N., Witters, T., Lisoni, J., Rohr, E., De Gendt, S., Heyns, M., Schaekers, M., Richard, O., Wickramanayaka, S., Yamada, N., Brunco, D. 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POONKOTTIL, N. - RIJCKAERT, H. - RAJENDRAN, K. - PETIT, R.R. - MARTIN, L.I.D.J. - VAN THOURHOUT, D. - VAN DRIESSCHE, I. - DETAVERNIER, C. - DENDOOVEN, J. Low Temperature Area Selective Atomic Layer Deposition of Ruthenium Dioxide Thin Films Using Polymers as Inhibition Layers. In ADVANCED MATERIALS INTERFACES. ISSN 2196-7350, MAR 2023, vol. 10, no. 9. Dostupné na: https://doi.org/10.1002/admi.202201934. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2004 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2004 2003 1.070
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