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Metal oxide gate electrodes for advanced CMOS technology

  1. TitleMetal oxide gate electrodes for advanced CMOS technology
    Author Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV

    Öszi Zsolt SAVELEK - Elektrotechnický ústav SAV

    Hooker J.C.

    Fanciulli M.

    Wiemer C.

    Dimoulas A.

    Vellianitis G.

    Roozeboom F.

    Source document Annalen der Physik. Vol. 13 (2004), p. 31
    Languageeng - English
    CountryDE - Germany
    Document kindrozpis článkov z periodík (rbx)
    CitationsLi, Z Schram, T Pantisano, L Conard, T Van Elshocht, S Deweerd, W De Gendt, S De Meyer, K Stesmans, A Shamuilia, S Afanas'ev, VV Akheyar, A Brunco, DP Yamada, N Lehnen, P JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, FEB 1 2007, vol. 101, no. 3.
    LI, Q. - WANG, S.J. - LI, K.B. - HUAN, A.C.H. - CHAI, J.W. - PAN, J.S. - ONG, C.K. APPLIED PHYSICS LETTERS. ISSN 0003-6951, DEC 20 2004, vol. 85, no. 25, p. 6155-6157.
    KIM, Hyun Min - LEE, Jong Hoon - YOM, Ahram - LEE, Han Sol - KIM, Dong Geun - KO, Dong Wan - KIM, Hong Seung - AHN, Ji-Hoon. Low-resistivity SrRuO3 thin films formed on SiO2 substrates without buffer layer by RF magnetron sputtering. In JOURNAL OF ALLOYS AND COMPOUNDS, 2021, vol. 857, no., pp. ISSN 0925-8388. Dostupné na: https://doi.org/10.1016/j.jallcom.2020.157627.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2004
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2004
Number of the records: 1  

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