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Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures
Title Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures Author Čičo Karol SAVELEK - Elektrotechnický ústav SAV Co-authors Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Georgakilas A. Pogany D. Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Source document ASDAM 2006 : proceedings of the 6th International Conference on Advanced Semiconductor Devices and Microsystems. P. 197-200. - Piscataway : IEEE, 2006 / Breza J. ; Donoval D. ; Vavrinský E. Language eng - English Country SK - Slovak Republic Document kind rozpis článkov z periodík (rzb) Citations KIM, H.D. - KIM, S. - YUN, M.J. Self-rectifying resistive switching behavior observed in Al2O3-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode. In JOURNAL OF ALLOYS AND COMPOUNDS. APR 25 2018, vol. 742, p. 822-827. Category AEC - Scientific papers in foreign peer-reviewed proceedings, monographs Category of document (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok Year 2006 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2006
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