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Fixed oxide charge in Ru-based chemical vapour deposited high-? gate stacks
Title Fixed oxide charge in Ru-based chemical vapour deposited high-? gate stacks Author Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Lupták Roman SAVELEK - Elektrotechnický ústav SAV Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV Weber U. Baumann P.K. Lindner J. Source document / Gusev E.P. Defects in high-K gate dielectric stacks. P. 277-286 : nano-electronic semiconductor devices : proceedings of the NATO Advanced Research Workshop on defects in Advanced High-K Dielectric Nano-electronicc Semiconductor Devices, St. Petetburg, Russia, July 11-14, 2005. - Dordrecht : Springer, 2006 Language eng - English Country DE - Germany Document kind rozpis článkov z periodík (rzb) Category AEC - Scientific papers in foreign peer-reviewed proceedings, monographs Category of document (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok Year 2006 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2006
Number of the records: 1