Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric

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Title	Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric
Author	Heidelberg G.
Co-authors	Roeckerath M.
	Steins R.
	Stefaniak M.
	Fox A.
	Schubert J.
	Kaluza N.
	Marso M.
	Lüth Hans
	Kordoš Peter SAVELEK - Elektrotechnický ústav SAV

Source document	ASDAM 2006 : proceedings of the 6th International Conference on Advanced Semiconductor Devices and Microsystems. P. 241-244. - Piscataway : IEEE, 2006 / Breza J. ; Donoval D. ; Vavrinský E.
Language	eng - English
Country	US - United States of America
Document kind	rozpis článkov z periodík (rzb)
Category	AEC - Scientific papers in foreign peer-reviewed proceedings, monographs
Category of document (from 2022)	V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
Type of document	príspevok
Year	2006

article

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2006

Number of the records: 1