Properties of Ru/HfxSi1-xOy/Si metal oxide semiconductor gate stack structures grown by atomic vapor deposition

Number of the records: 1

Title	Properties of Ru/HfxSi1-xOy/Si metal oxide semiconductor gate stack structures grown by atomic vapor deposition
Author	Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ^ORCID
Co-authors	Lupták Roman SAVELEK - Elektrotechnický ústav SAV
	Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV
	Čičo Karol SAVELEK - Elektrotechnický ústav SAV
	Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Weber U.
	Baumann P.K.
	Lindner J.
	Espinos J.P.

Source document	Journal of the Electrochemical Society. Vol. 153, (2006), p. F176-F179. - Penington
Language	eng - English
Country	GB - Great Britian
Document kind	rozpis článkov z periodík (rbx)
Citations	KAWANO, K. - KOSUGE, H. - OSHIMA, N. - FUNAKUBO, H. In ELECTROCHEMICAL AND SOLID STATE LETTERS. ISSN 1099-0062, 2009, vol. 12, no. 10, p. D80-D83.
	SON, J.Y. - MAENG, W.J. - KIM, W.H. - SHIN, Y.H. - KIM, H. In THIN SOLID FILMS. ISSN 0040-6090, MAY 29 2009, vol. 517, no. 14, p. 3892-3895.
	LUO, B. - GLADFELTER, W.L. In CHEMICAL VAPOUR DEPOSITION: PRECURSORS, PROCESSES AND APPLICATIONS. 2009, p. 320-356.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2006

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2006	2005	2.190	Q1	1.523	Q1

Number of the records: 1