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PECVD silicon carbide deposited at different temperatures
Title PECVD silicon carbide deposited at different temperatures Author Huran Jozef 1955 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV ORCID Hotový I. Petzold J. Kobzev A.P. Balalykin Nikolay I. Source document Czechoslovak journal of physics B. Vol. 56, (2006), p. S1207-S1211. - Praha : Academia Language eng - English Country CZ - Czech Republic Document kind rozpis článkov z periodík (rbx) Citations HONG, R.D. - HUANG, J. - CHEN, X.P. - ZHOU, Y. - LIU, D.Y. - WU, Z.Y. In SPECTROSCOPY LETTERS. 2010, vol. 43, no. 4, p. 298-305. CHENG, C.H. - WU, C.L. - CHEN, C.C. - TSAI, L.H. - LIN, Y.H. - LIN, G.R. In IEEE PHOTONICS JOURNAL. OCT 2012, vol. 4, no. 5, p. 1762-1775. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2006 article
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2006 2005 0.360 Q4 0.240 Q3
Number of the records: 1