PECVD silicon carbide deposited at different temperatures

Number of the records: 1

Title	PECVD silicon carbide deposited at different temperatures
Author	Huran Jozef 1955 SAVELEK - Elektrotechnický ústav SAV ^ORCID
Co-authors	Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Hotový I.
	Petzold J.
	Kobzev A.P.
	Balalykin Nikolay I.

Source document	Czechoslovak journal of physics B. Vol. 56, (2006), p. S1207-S1211. - Praha : Academia
Language	eng - English
Country	CZ - Czech Republic
Document kind	rozpis článkov z periodík (rbx)
Citations	HONG, R.D. - HUANG, J. - CHEN, X.P. - ZHOU, Y. - LIU, D.Y. - WU, Z.Y. In SPECTROSCOPY LETTERS. 2010, vol. 43, no. 4, p. 298-305.
	CHENG, C.H. - WU, C.L. - CHEN, C.C. - TSAI, L.H. - LIN, Y.H. - LIN, G.R. In IEEE PHOTONICS JOURNAL. OCT 2012, vol. 4, no. 5, p. 1762-1775.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2006

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2006	2005	0.360	Q4	0.240	Q3

Number of the records: 1