Role of the V-III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE

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Title	Role of the V-III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE
Author	Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
Co-authors	Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Vávra Ivo 1949 SAVELEK - Elektrotechnický ústav SAV
	Sedláčková K. SAVELEK - Elektrotechnický ústav SAV
	Kučera Michal 1956 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Radnóczi G.

Source document	Journal of Crystal Growth. Vol. 298 (2007), p. 76-80. - Amsterdam : Elsevier Science
Language	eng - English
Country	NL - Netherlands
Document kind	rozpis článkov z periodík (rbx)
Citations	LU, X.F. - LI, L.X. - GUO, X. - REN, J.Q. - XUE, H.T. - TANG, F.L. The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. ISSN 0921-5107, OCT 2022, vol. 284. Dostupné na: https://doi.org/10.1016/j.mseb.2022.115882.
	PARK, K.W. - PARK, C.Y. - LEE, Y.T. Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, JUL 30 2012, vol. 101, no. 5. Dostupné na: https://doi.org/10.1063/1.4739835.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Year	2007

article

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2007	2006	1.809	Q2	1.007	Q1

Number of the records: 1