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Simulation of tunneling current in GaN Schottky diodes

  1. TitleSimulation of tunneling current in GaN Schottky diodes
    Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Source document . P. 40-43 Proceedings of the 13th International Conference on Applied Physics of Condensed Matter : APCOM 2007. - Žilina : ŽU, 2007 / Pudiš D. ; Martinek I. ; Jamnický I. ; International Conference on Applied Physics of Condensed Matter
    Languageeng - English
    CountrySK - Slovak Republic
    Document kindrozpis článkov z periodík (rzb)
    CategoryAED - Scientific papers in domestic peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year2007
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2007
Number of the records: 1  

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