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Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2

  1. TitleTechnology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2
    Author Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Pozzovivo G.

    Abermann S.

    Carlin J.-F.

    Gonschorek M.

    Feltin E.

    Grandjean N.

    Bertagnolli E.

    Strasser G.

    Pogany D.

    Source document . Vol. 55, (2008), p. 937-941 IEEE Transactions on Electron Devices
    Languageeng - English
    CountryUS - United States of America
    Document kindrozpis článkov z periodík (rbx)
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    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2008
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    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
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