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Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices
Title Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices Author Florovič M. Co-authors Kováč Ján Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Škriniarová Jaroslava Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Michalka M. Donoval D. Uherek F. Source document ASDAM 2008. P. 103-106 : conference proceedings. - Piscataway, NJ : Institute of Electrical and Electronics Engineers, 2008 / Haščík Štefan 1956 ; Osvald Jozef 1953 ; International Conference on Advanced Semiconductor Devices and Microsystems Language eng - English Country US - United States of America Document kind rozpis článkov z periodík (rzb) Citations MACHERZYNSKI, W. - GRYGLEWICZ, J. - STAFINIAK, A. - PRAZMOWSKA, J. - PASZKIEWICZ, R. In ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING. MAR 2016, vol. 14, no. 1, p. 83-88. Category AEC - Scientific papers in foreign peer-reviewed proceedings, monographs Category of document (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok Year 2008 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2008
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