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Improved high-frequency performance of Al2O3/AlGaN/GaN MISHFETs compared to AlGaN/GaN HFETs

  1. TitleImproved high-frequency performance of Al2O3/AlGaN/GaN MISHFETs compared to AlGaN/GaN HFETs
    Author Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
    Co-authors Fox A.

    Eickelkamp M.

    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Grützmacher D.

    Vescan A.

    Source document / Pudiš D. ; Harmatha L. ; Müllerová J. ; Jamnický I. . P. 25-28 APCOM 2009 : proceedings of the 15th International Conference on Applied Physics of Condensed Matter, held in KRÚ Bystrá, Liptovský Ján, Slovak Republic, June 24-26, 2009. - Žilina : University of Žilina, 2009
    Languageeng - English
    CountrySK - Slovak Republic
    Document kindrozpis článkov z periodík (rzb)
    CategoryAED - Scientific papers in domestic peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year2009
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2009
Number of the records: 1  

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