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Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements
Title Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements Author Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Eickelkamp M. Fox A. Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV Vescan A. Grützmacher D. Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Source document Semiconductor Science and Technology. Vol. 24, (2009), 075014 Language eng - English Country GB - Great Britian Document kind rozpis článkov z periodík (rbx) Citations LEE, K.W. - LIN, H.C. - LEE, F.M. - HUANG, H.K. - WANG, Y.H. In APPLIED PHYSICS LETTERS. MAY 17 2010, vol. 96, no. 20. LIU, H.-Y. - HSU, W.-C. - LEE, C.-S. - CHOU, B.-Y. - LIAO, Y.B. - CHIANG, M.-H. In IEEE TRANSACTIONS ON ELECTRON DEVICES. AUG 2014, vol. 61, no. 8, p. 2760-2766. CHIU, Y.S. - LIAO, J.T. - LIN, Y.C. - LIU, S.C. - LIN, T.M. - IWAI, H. - KAKUSHIMA, K. - CHANG, E.Y. In JAPANESE JOURNAL OF APPLIED PHYSICS. MAY 2016, vol. 55, no. 5. CHIU, Y.S. - LUC, Q.H. - LIN, Y.C. - HUANG, J.C. - DEE, C.F. - MAJLIS, B.Y. - CHANG, E.Y. In JAPANESE JOURNAL OF APPLIED PHYSICS. SEP 2017, vol. 56, no. 9. HUANG, C.Y. - MAZUMDER, S. - LIN, P.C. - LEE, K.W. - WANG, Y.H. Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics. In MATERIALS. OCT 2022, vol. 15, no. 19. Dostupné na: https://doi.org/10.3390/ma15196895. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2009 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2009 2008 1.434 Q2 1.272 Q1
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