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Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

  1. TitleLow-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers
    Author Marcenat Christophe
    Co-authors Kačmarčík Jozef 1972- SAVEXFYZ - Ústav experimentálnej fyziky SAV    ORCID

    Piquerel R.

    Achatz P.

    Prudon G.

    Dubois C.

    Gautier B.

    Dupuy J.C.

    Bustarret Etienne

    Ortega L.

    Klein Thierry

    Boulmer J.

    Kociniewski T.

    Débarre D.

    Source document Physical Review B. Vol. 81, no. 2 (2010), art. no. R020501
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsSKROTZKI, R. - FIEDLER, J. - HERRMANNSDORFER, T. - HEERA, V. - VOELSKOW, M. - MUCKLICH, A. - SCHMIDT, B. - SKORUPA, W. - GOBSCH, G. - HELM, M. - WOSNITZA, J. On-chip superconductivity via gallium overdoping of silicon. In APPLIED PHYSICS LETTERS, 2010, vol. 97, no. 19, art. no. 192505.
    FIEDLER, J. - HEERA, V. - SKROTZKI, R. - HERRMANNSDORFER, T. - VOELSKOW, M. - MUCKLICH, A. - OSWALD, S. - SCHMIDT, B. - SKORUPA, W. - GOBSCH, G. - WOSNITZA, J. - HELM, M. Superconducting films fabricated by high-fluence Ga implantation in Si. In PHYSICAL REVIEW B. JUN 3 2011, vol. 83, no. 21. Art. no.214504.
    SKROTZKI, R. - HERRMANNSDORFER, T. - HEERA, V. - FIEDLER, J. - MUCKLICH, A. - HELM, M. - WOSNITZA, J. The impact of heavy Ga doping on superconductivity in germanium. In LOW TEMPERATURE PHYSICS. SEP-OCT 2011, vol. 37, no. 9-10, p. 877-883.
    Skrotzki, R., Herrmannsdörfer, T., Heera, V., Fiedler, J., Mücklich, A., Helm, M., Wosnitza, J.The impact of heavy Ga doping on superconductivity in germanium 2011 Fizika Nizkikh Temperatur (Kharkov) 37 (9-10) , pp. 1098-1106
    FIEDLER, J. - HEERA, V. - VOELSKOW, M. - MUECKLICH, A. - REUTHER, H. - SKORUPA, W. - GOBSCH, G. - HELM, M. Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors. In ACTA PHYSICA POLONICA A. ISSN 0587-4246, 2013, vol. 123, no. 5, pp. 916.
    KUO, Pai-Chia - CHEN, Chun-Wei - LEE, Ku-Pin - SHIUE, Jessie. Superconductivity observed in platinum-silicon interface. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, 2014, vol. 104, no. 21, art. no. 211604.
    SHIM, Yun-Pil - TAHAN, Charles. Bottom-up superconducting and Josephson junction devices inside a group-IV semiconductor. In NATURE COMMUNICATIONS. ISSN 2041-1723, 2014, vol. 5, art. no. 4225.
    OVSYANNIKOV, Sergey V. - GOU, Huiyang - KARKIN, Alexander E. - SHCHENNIKOV, Vladimir V. - WIRTH, Richard - DMITRIEV, Vladimir - NAKAJIMA, Yoichi - DUBROVINSKAIA, Natalia - DUBROVINSKY, Leonid S. Bulk Silicon Crystals with the High Boron Content, Si1-xBx: Two Semiconductors Form an Unusual Metal. In CHEMISTRY OF MATERIALS. ISSN 0897-4756, 2014, vol. 26, no. 18, pp. 5274.
    SHIM, Yun-Pil - TAHAN, Charles. Superconducting-Semiconductor Quantum Devices: From Qubits to Particle Detectors. In IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. ISSN 1077-260X, 2015, vol. 21, no. 2, art. no. 9100209.
    SHIM, Yun-Pil - TAHAN, Charles. Semiconductor-inspired design principles for superconducting quantum computing. In NATURE COMMUNICATIONS. ISSN 2041-1723, 2016, vol. 7.
    WANG, Jingjing - SUN, Guoliang - KONG, Panlong - SUN, Weiguo - LU, Cheng - PENG, Feng - KUANG, Xiaoyu. Novel structural phases and the electrical properties of Si3B under high pressure. In PHYSICAL CHEMISTRY CHEMICAL PHYSICS. ISSN 1463-9076, 2017, vol. 19, no. 24, pp. 16206-16212.
    SANO, Kazuhiro - SEO, Mithuki - NAKAMURA, Kohji. Plasmon Effect on the Coulomb Pseudopotential ( )mu* in the McMillan Equation. In JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN. ISSN 0031-9015, 2019, vol. 88, no. 9.
    PRUCNAL, Slawomir - HEERA, Viton - HUEBNER, Rene - WANG, Mao - MAZUR, Grzegorz P. - GRZYBOWSKI, Michal J. - QIN, Xin - YUAN, Ye - VOELSKOW, Matthias - SKORUPA, Wolfgang - REBOHLE, Lars - HELM, Manfred - SAWICKI, Maciej - ZHOU, Shengqiang. Superconductivity in single-crystalline aluminum- and gallium-hyperdoped germanium. In PHYSICAL REVIEW MATERIALS. ISSN 2475-9953, 2019, vol. 3, no. 5.
    LIANG, Xiaowei - BERGARA, Aitor - XIE, Yu - WANG, Linyan - SUN, Rongxin - GAO, Yufei - ZHOU, Xiang-Feng - XU, Bo - HE, Julong - YU, Dongli - GAO, Guoying - TIAN, Yongjun. Prediction of superconductivity in pressure-induced new silicon boride phases. In PHYSICAL REVIEW B. ISSN 2469-9950, 2020, vol. 101, no. 1, pp. Dostupné na: https://doi.org/10.1103/PhysRevB.101.014112.
    SARDASHTI, K. - NGUYEN, T. - HATEFIPOUR, M. - SARNEY, W. L. - YUAN, J. - MAYER, W. - KISSLINGER, K. - SHABANI, J. Tailoring superconducting phases observed in hyperdoped Si:Ga for cryogenic circuit applications. In APPLIED PHYSICS LETTERS, 2021, vol. 118, no. 7, pp. ISSN 0003-6951. Dostupné na: https://doi.org/10.1063/5.0039983.
    DAUBRIAC, R. - ALBA, P. Acosta - MARCENAT, C. - LEQUIEN, S. - VETHAAK, T. D. - NEMOUCHI, F. - LEFLOCH, F. - KERDILES, S. Superconducting Polycrystalline Silicon Layer Obtained by Boron Implantation and Nanosecond Laser Annealing. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, vol. 10, no. 1, pp. ISSN 2162-8769. Dostupné na: https://doi.org/10.1149/2162-8777/abdc41.
    CHIODI, Francesca - DAUBRIAC, Richard - KERDILÈS, Sébastien. Laser ultra-doped silicon: Superconductivity and applications. In Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics, 2021-01-01, pp. 357-400. Dostupné na: https://doi.org/10.1016/B978-0-12-820255-5.00009-X.
    MOUN, M. - SHEET, G. Superconductivity in silicon. In SUPERCONDUCTOR SCIENCE & TECHNOLOGY. ISSN 0953-2048, AUG 1 2022, vol. 35, no. 8.
    BONNET, P. - CHIODI, F. - FLANIGAN, D. - DELAGRANGE, R. - BROCHU, N. - DéBARRE, D. - LE SUEUR, H. Strongly Nonlinear Superconducting Silicon Resonators. In PHYSICAL REVIEW APPLIED. ISSN 2331-7019, MAR 23 2022, vol. 17, no. 3.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2010
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1103/PhysRevB.81.020501
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201020093.4753.107Q1
Number of the records: 1  

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