Oxidized Al film as an insulation layer in AlGaN/GaN metal-oxide-semiconductor structure heterostructure field effect transistors

Number of the records: 1

Title	Oxidized Al film as an insulation layer in AlGaN/GaN metal-oxide-semiconductor structure heterostructure field effect transistors
Author	Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ^ORCID
Co-authors	Gaži Štefan 1948 SAVELEK - Elektrotechnický ústav SAV
	Sofer Z.
	Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Mikulics M.
	Greguš Ján
	Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
	Kordoš Peter SAVELEK - Elektrotechnický ústav SAV

Source document	. Vol. 49, (2010), art. no. 046504 Japanese Journal of Applied Physics
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	OZEN, S. - SENAY, V. - PAT, S. - KORKMAZ, S. In MATERIALS RESEARCH EXPRESS. APR 2016, vol. 3, no. 4.
	KANAGA, S. - KUSHWAH, B. - DUTTA, G. - DASGUPTA, N. - DASGUPTA, A. AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric. In 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, COMPUTING AND COMMUNICATION TECHNOLOGIES (CONECCT). 2018.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2010
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1143/JJAP.49.046504

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2010	2009	1.138	Q3	0.488	Q1

Number of the records: 1