Study of Si implantation into Mg-doped GaN for MOSFETs

Number of the records: 1

Title	Study of Si implantation into Mg-doped GaN for MOSFETs
Author	Ostermaier C.
Co-authors	Ahn S.-I.
	Potzger K.
	Helm M.
	Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Pogany D.
	Strasser G.
	Lee J.-H.
	Hahm S.-H.
	Lee Jung-Hee

Source document	Physica status solidi C. Vol. 7, (2010), p. 1964-1966
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	ZHANG, Y.H. - LIU, Z.H. - TADJER, M.J. - SUN, M. - PIEDRA, D. - HATEM, C. - ANDERSON, T.J. - LUNA, L.E. - NATH, A. - KOEHLER, A.D. - OKUMURA, H. - HU, J. - ZHANG, X. - GAO, X. - FEIGELSON, B.N. - HOBART, K.D. - PALACIOS, T. In IEEE ELECTRON DEVICE LETTERS. AUG 2017, vol. 38, no. 8, p. 1097-1100.
	LORENZ, K. Ion Implantation into Nonconventional GaN Structures. In PHYSICS. ISSN 2624-8174, JUN 2022, vol. 4, no. 2, p. 548-564. Dostupné na: https://doi.org/10.3390/physics4020036.
Category	ADEB - Scientific papers in other foreign journals not registered in Current Contents Connect without IF (non-impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2010
Registered in	WOS
Registered in	SCOPUS
DOI	10.1002/pssc.200983534

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	N

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2010	2009			0.428	Q3

Number of the records: 1