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Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs
Title Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs Author Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Ostermaier C. Pozzovivo G. Basnar B. Schrenk W. Carlin J.-F. Gonschorek M. Feltin E. Grandjean N. Douvry Y. Gaquire Ch. De Jaeger J.-C. Strasser G. Pogany D. Gornik E. Source document ASDAM 2010 : proceedings of the 8th International Conference on Advanced Semiconductor Devices and Microsystems. P. 163-166. - Piscataway : IEEE, 2010 / Breza J. ; Donoval D. ; Vavrinský E. Language eng - English Document kind rozpis článkov z periodík (rzb) Category AEC - Scientific papers in foreign peer-reviewed proceedings, monographs Category of document (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok Year 2010 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010
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