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Resistive switching in RuO2/TiO2/RuO2 MIM structures for non-volatile memory application

  1. TitleResistive switching in RuO2/TiO2/RuO2 MIM structures for non-volatile memory application
    Author Hudec Boris SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Hranai M.

    Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV

    Aarik J.

    Tarre A.

    Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Source document ASDAM 2010 : proceedings of the 8th International Conference on Advanced Semiconductor Devices and Microsystems. P. 255-258. - Piscataway : IEEE, 2010 / Breza J. ; Donoval D. ; Vavrinský E.
    Languageeng - English
    Document kindrozpis článkov z periodík (rzb)
    CitationsCASTAN, H. - GARCIA, H. - DUENAS, S. - BAILON, L. - MIRANDA, E. - KUKLI, K. - KEMELL, M. - RITALA, M. - LESKELA, M. In THIN SOLID FILMS. SEP 30 2015, vol. 591, A, p. 55-59.
    HO, P.W.C. - HATEM, F.O. - ALMURIB, H.A.F. - KUMAR, T.N. In 2014 2ND INTERNATIONAL CONFERENCE ON ELECTRONIC DESIGN (ICED). 2014, p. 249-254.
    Ho, P.W.C., Hatem, F.O., Almurib, H.A.F., Kumar, T.N. Journal of Semiconductors 37 (2016), 064001
    CategoryAEC - Scientific papers in foreign peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year2010
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2010
Number of the records: 1  

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