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Characterization of plasma-induced damage of selectively recessed GaN/InAlN/AlN/GaN heterostructures using SiCl4 and SF6
Title Characterization of plasma-induced damage of selectively recessed GaN/InAlN/AlN/GaN heterostructures using SiCl4 and SF6 Author Ostermaier C. Co-authors Pozzovivo G. Basnar B. Schrenk W. Carlin J.-F. Gonschorek M. Grandjean N. Vincze A. Tóth L. Pécz B. Strasser G. Pogany D. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Japanese Journal of Applied Physics. Vol. 49, (2010), 116506 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations LEE, D.S. - CHUNG, J.W.W. - WANG, H. - GAO, X. - GUO, S.P. - FAY, P. - PALACIOS, T. In IEEE ELECTRON DEVICE LETTERS. JUN 2011, vol. 32, no. 6, p. 755-757. MUDUSU, D. - NANDANAPALLI, K.R. - DUGASANI, S.R. - KARUPPANNAN, R. - REDDY, G.K.R. - SUBRAMANIAN, R.G.E. - PARK, S.H. In RSC ADVANCES. 2017, vol. 7, no. 18, p. 11111-11117. WANG, L. - ZHANG, J.Q. - LI, L.A. - MAEDA, Y. - AO, J.P. In CHINESE PHYSICS B. MAR 2017, vol. 26, no. 3. SMITH, M.D. - LI, X. - UREN, M.J. - THAYNE, I.G. - KUBALL, M. Polarity dependence in Cl-2-based plasma etching of GaN, AlGaN and AlN. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, AUG 15 2020, vol. 521. FILIPPOV, I.A. - SHAKHNOV, V.A. - VELIKOVSKII, L.E. - BRUDNYI, P.A. - DEMCHENKO, O.I. Plasma Etching in InAlN/GaN Hemt Technology. In RUSSIAN PHYSICS JOURNAL. ISSN 1064-8887, MAY 2020, vol. 63, no. 1, p. 94-98. ZHANG, J.Q. - WANG, L. - WANG, Q.P. - JIANG, Y. - LI, L.A. - ZHU, H.C. - AO, J.P. Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAR 2016, vol. 31, no. 3. TOPRAK, A. - YILMAZ, D. - OZBAY, E. Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology. In MATERIALS RESEARCH EXPRESS. DEC 2021, vol. 8, no. 12. OZAKI, S. - YAITA, J. - YAMADA, A. - MINOURA, Y. - OHKI, T. - OKAMOTO, N. - NAKAMURA, N. - KOTANI, J. Surface-Oxide-Controlled InAlGaN/GaN High-Electron-Mobility Transistors Using Al2O3-Based Insulated-Gate Structures with H2O Vapor Pretreatment. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, APR 2022, vol. 219, no. 7. Dostupné na: https://doi.org/10.1002/pssa.202100638. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2010 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1143/JJAP.49.116506 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010 2009 1.138 Q3 0.488 Q1
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