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Piezoelectric response of AlGaN/GaN based circular-HEMT structures

  1. TitlePiezoelectric response of AlGaN/GaN based circular-HEMT structures
    Author Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Držík Milan

    Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Vallo Martin SAVELEK - Elektrotechnický ústav SAV

    Kutiš V.

    Bruncko J.

    Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV

    Jakovenko J.

    Husák M.

    Source document Microelectronic Engineering. Vol. 88, (2011), p. 2424-2426
    Languageslo - Slovak
    Document kindrozpis článkov z periodík (rbx)
    CitationsWANG, C. - CHO, S.J. - KIM, N.Y. In MICROELECTRONIC ENGINEERING. SEP 2013, vol. 109, p. 24-27.
    CHAPIN, C.A. - CHIAMORI, H.C. - HOU, M. - SENESKY, D.G. In STRUCTURAL HEALTH MONITORING 2013, VOLS 1 AND 2. 2013, p. 1621-1628.
    Senesky, D.G., So, H., Suria, A.J., Yalamarthy, A.S., Jain, S.R., Chapin, C.A., Chiamori, H.C., Hou, M. In Semiconductor-Based Sensors. World Scientific Publishing Co. 2016. ISBN: 978-981314673-0. P. 395-433
    TOMITA, S. - YANAGITANI, T. - TAKAYANAGI, S. - ICHIHASHI, H. - SHIBAGAKI, Y. - HAYASHI, H. - MATSUKAWA, M. In JOURNAL OF APPLIED PHYSICS. JUN 21 2017, vol. 121, no. 23.
    KHAN, A.B. - ANJUM, S.G. - SIDDIQUI, M.J. Effect of Barrier Layer Thickness on AlGaN/GaN Double Gate MOS-HEMT Device Performance for High-Frequency Application. In JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS. JAN 2018, vol. 13, no. 1, p. 20-26.
    WANG, A.S. - ZENG, L.Y. - WANG, W. - CALLE, F. Modification of strain and 2DEG density induced by wafer bending of AlGaN/GaN heterostructure: Influence of edges caused by processing. In AIP ADVANCES. MAR 2018, vol. 8, no. 3.
    LUO, J. - GUAN, M. - ZHANG, Y. - CHEN, L.Q. - ZENG, Y.P. The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors. In JOURNAL OF SEMICONDUCTORS. DEC 2018, vol. 39, no. 12.
    WANG, Ashu - ZENG, Lingyan - WANG, Wen - LUO, Zhenghua. Static and dynamic simulation studies on the AlGaN/GaN pressure sensor. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, 2019, vol. 34, no. 11, pp. 115022
    SUN, J.W. - HU, D. - LIU, Z.W. - MIDDELBURG, L.M. - VOLLEBREGT, S. - SARRO, P.M. - ZHANG, G.Q. Low power AlGaN/GaN MEMS pressure sensor for high vacuum application. In SENSORS AND ACTUATORS A-PHYSICAL. ISSN 0924-4247, OCT 15 2020, vol. 314.
    KUMARI, Vandana - SAXENA, Manoj - GUPTA, Mridula. Sensitivity Assessment of RingFET Architecture for the Detection of Gas Molecules: Numerical Investigation. In IETE TECHNICAL REVIEW, 2021, vol. 38, no. 3, pp. 294-302. ISSN 0256-4602. Dostupné na: https://doi.org/10.1080/02564602.2020.1726830.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2011
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1016/j.mee.2010.12.013
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201120101.575Q20.934Q1
Number of the records: 1  

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