Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate

Number of the records: 1

Title	Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate
Author	Mikulics M.
Co-authors	Fox A.
	Marso M.
	Grützmacher D.
	Donoval D.
	Kordoš Peter SAVELEK - Elektrotechnický ústav SAV

Source document	Vacuum. Vol. 86, (2012), p. 754-756
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	SHRESTHA, N.M. - WANG, Y.Y. - LI, Y.M. - CHANG, E.Y. In VACUUM. AUG 2015, vol. 118, SI, p. 59-63.
	LIU, Y. - WANG, J.Y. - XU, Z. - CAI, J.B. - WANG, M.J. - YU, M. - XIE, B. - WU, W.G. In RARE METALS. JAN 2015, vol. 34, no. 1, p. 1-5.
	GHAFFARI, M. - OROUJI, A.A. - VALINATAJ, M. In JOURNAL OF THE KOREAN PHYSICAL SOCIETY. DEC 2017, vol. 71, no. 12, p. 1027-1037.
	TANG, L. - ZHANG, H. - YUAN, Y.M. Crystal structures and stabilities of AlxGa1-xN and P-Type AlxGa1-xN with different Al compositions: A density functional study. In VACUUM. ISSN 0042-207X, MAR 2020, vol. 173.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2012
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1016/j.vacuum.2011.07.016

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2012	2011	1.317	Q2	0.570	Q2

Number of the records: 1