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Buffer-related degradation aspects of single and double-heterostructure quantum well InAlN/GaN high-electron-mobility transistors
Title Buffer-related degradation aspects of single and double-heterostructure quantum well InAlN/GaN high-electron-mobility transistors Author Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Vitanov S. Dua C. Carlin J.-F. Ostermaier C. Alexewicz A. Strasser G. Pogany D. Gornik E. Grandjean N. Delage S. Palankovski V. Source document Japanese Journal of Applied Physics. Vol. 51, (2012), art. no. 054102 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations Tang, C., Sheng, K., Xie, G. International Conference on Communications, Circuits and Systems, ICCCAS 2013, 2, 6765355, pp. 353-357 GUO, L. - YANG, X.L. - HU, A.Q. - FENG, Z.H. - LV, Y.J. - ZHANG, J. - CHENG, J.P. - TANG, N. - WANG, X.Q. - GE, W.K. - SHEN, B. In SCIENTIFIC REPORTS. NOV 23 2016, vol. 6. WU, Y.F. - DEL ALAMO, J.A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. SEP 2016, vol. 63, no. 9, p. 3487-3492. NARITA, T. - FUJIMOTO, Y. - WAKEJIMA, A. - EGAWA, T. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. MAR 2016, vol. 31, no. 3. PETITDIDIER, S. - GUHEL, Y. - TROLET, J.L. - MARY, P. - GAQUIERE, C. - BOUDART, B. In APPLIED PHYSICS LETTERS. APR 17 2017, vol. 110, no. 16. PEVTSOV, E. Ph - DEMENKOVA, T. A. - INDRISHENOK, V. I. - VARLAMOV, N. V. Simulation of characteristics of microwave transistors with AlGaN heterostructures. In 2ND INTERNATIONAL TELECOMMUNICATION CONFERENCE ADVANCED MICRO- AND NANOELECTRONIC SYSTEMS AND TECHNOLOGIES. ISSN 1757-8981, 2019, vol. 498, no., pp. LI, M. - HUANG, S. - WANG, X.H. - GUO, F.Q. - YAO, Y.X. - SHI, J.Y. - WEI, K. - LIU, X.Y. Evolution of Deep Traps in GaN-Based RF High Electron Mobility Transistors under High Voltage OFF-State Stress. In PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. ISSN 1862-6254, APR 2022, vol. 16, no. 4. Dostupné na: https://doi.org/10.1002/pssr.202100539. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2012 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1143/JJAP.51.054102 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012 2011 1.058 Q3 0.583 Q1
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