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Buffer-related degradation aspects of single and double-heterostructure quantum well InAlN/GaN high-electron-mobility transistors

  1. TitleBuffer-related degradation aspects of single and double-heterostructure quantum well InAlN/GaN high-electron-mobility transistors
    Author Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Vitanov S.

    Dua C.

    Carlin J.-F.

    Ostermaier C.

    Alexewicz A.

    Strasser G.

    Pogany D.

    Gornik E.

    Grandjean N.

    Delage S.

    Palankovski V.

    Source document Japanese Journal of Applied Physics. Vol. 51, (2012), art. no. 054102
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsTang, C., Sheng, K., Xie, G. International Conference on Communications, Circuits and Systems, ICCCAS 2013, 2, 6765355, pp. 353-357
    GUO, L. - YANG, X.L. - HU, A.Q. - FENG, Z.H. - LV, Y.J. - ZHANG, J. - CHENG, J.P. - TANG, N. - WANG, X.Q. - GE, W.K. - SHEN, B. In SCIENTIFIC REPORTS. NOV 23 2016, vol. 6.
    WU, Y.F. - DEL ALAMO, J.A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. SEP 2016, vol. 63, no. 9, p. 3487-3492.
    NARITA, T. - FUJIMOTO, Y. - WAKEJIMA, A. - EGAWA, T. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. MAR 2016, vol. 31, no. 3.
    PETITDIDIER, S. - GUHEL, Y. - TROLET, J.L. - MARY, P. - GAQUIERE, C. - BOUDART, B. In APPLIED PHYSICS LETTERS. APR 17 2017, vol. 110, no. 16.
    PEVTSOV, E. Ph - DEMENKOVA, T. A. - INDRISHENOK, V. I. - VARLAMOV, N. V. Simulation of characteristics of microwave transistors with AlGaN heterostructures. In 2ND INTERNATIONAL TELECOMMUNICATION CONFERENCE ADVANCED MICRO- AND NANOELECTRONIC SYSTEMS AND TECHNOLOGIES. ISSN 1757-8981, 2019, vol. 498, no., pp.
    LI, M. - HUANG, S. - WANG, X.H. - GUO, F.Q. - YAO, Y.X. - SHI, J.Y. - WEI, K. - LIU, X.Y. Evolution of Deep Traps in GaN-Based RF High Electron Mobility Transistors under High Voltage OFF-State Stress. In PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. ISSN 1862-6254, APR 2022, vol. 16, no. 4. Dostupné na: https://doi.org/10.1002/pssr.202100539.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2012
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1143/JJAP.51.054102
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201220111.058Q30.583Q1
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