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Electrical and optical characterization of Ni/Al0,3Ga0,7N/GaN Schottky barrier diodes
Title Electrical and optical characterization of Ni/Al0,3Ga0,7N/GaN Schottky barrier diodes Author Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Co-authors Škriniarová Jaroslava Chvála A. Florovič M. Kováč Jaroslav Donoval D. Source document Journal of Electronics Materials. Vol. 41 (2012), p. 3017-3020 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations GASSOUMI, M. - MOSBAHI, H. - SOLTANI, A. - SBRUGNERA-AVRAMOVIC, V. - ZAIDI, M.A. - GAQUIERE, C. - MEJRI, H. - MAAREF, H. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. DEC 2013, vol. 16, no. 6, p. 1775-1778. SHARMIN, S. - MURAKI, K. - FUJISAWA, T. In JAPANESE JOURNAL OF APPLIED PHYSICS. NOV 2013, vol. 52, no. 11, 1. NAKAMURA, A. - SUGIYAMA, M. - FUJII, K. - NAKANO, Y. In JAPANESE JOURNAL OF APPLIED PHYSICS. AUG 2013, vol. 52, no. 8, 2, SI. TURUT, Abdulmecit - KARABULUT, Abdulkerim - EFEOGLU, Hasan. Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al2O3/n-GaAs structures. In JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. ISSN 0957-4522, 2021, vol. 32, no. 17, pp. 22680-22688. Dostupné na: https://doi.org/10.1007/s10854-021-06753-1. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2012 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1007/s11664-012-2184-5 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012 2011 1.466 Q2 0.844 Q1
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