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Influence of layer structure on electrical properties of AlGaN/GaN HEMTs

  1. TitleInfluence of layer structure on electrical properties of AlGaN/GaN HEMTs
    Author Benko P.
    Co-authors Kováč Jaroslav

    Chvála A.

    Florovič M.

    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV

    Škriniarová Jaroslava

    Harmatha L.

    Source document ASDAM 2012 : conference proceedings. P. 41-44. - Piscataway : IEEE, 2012 / Haščík Štefan 1956 ; Osvald Jozef 1953 ; International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2012
    Languageeng - English
    Document kindrozpis článkov z periodík (rzb)
    CategoryAFC - Published papers from foreign scientific conferences
    Year2012
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2012
Number of the records: 1  

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