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Current transport mechanisms of amorphous n–doped silicon carbide/crystalline silicon heterostructure: impact of nitrogen dopation

  1. TitleCurrent transport mechanisms of amorphous n–doped silicon carbide/crystalline silicon heterostructure: impact of nitrogen dopation. [elektronický zdroj]
    Author Perný M.
    Co-authors Mikolášek M.

    Šály V.

    Huran Jozef 1955 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Országh J.

    Source document 35th International Spring Seminar on Electronics Technology. P. 25-30. - : IEEE, 2012
    Languageslo - Slovak
    CountrySK - Slovak Republic
    Document kindrozpis článkov z elektronických zdrojov
    CategoryGHG - Works published on the internet
    Year2012
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2012
Number of the records: 1  

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