Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT

Number of the records: 1

Title	Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT
Author	Vallo Martin SAVELEK - Elektrotechnický ústav SAV
Co-authors	Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV
	Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Vincze A.
	Rýger Ivan 1987 SAVELEK - Elektrotechnický ústav SAV

Source document	Applied Surface Science. Vol. 267, (2013), p. 159-163
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	LIN, R.M. - CHU, F.C. - DAS, A. - LIAO, S.Y. - SU, V.C. In JAPANESE JOURNAL OF APPLIED PHYSICS. NOV 2013, vol. 52, no. 11, 1.
	HUANG, H.L. - LIANG, Y.C. In SOLID-STATE ELECTRONICS. DEC 2015, vol. 114, p. 148-154.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2013
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1016/j.apsusc.2012.09.004

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2013	2012	2.112	Q1	0.913	Q1

Number of the records: 1