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Behaviour of amorphous silicon carbide in Au/a-SiC/Si heterostructures prepared by PECVD technology using two different RF modes
Title Behaviour of amorphous silicon carbide in Au/a-SiC/Si heterostructures prepared by PECVD technology using two different RF modes Author Perný M. Co-authors Mikolášek M. Šály V. Ružinský M. Ďurman V. Pavuk M. Huran Jozef 1955 SAVELEK - Elektrotechnický ústav SAV ORCID Országh J. Matejčík Š. Source document Applied Surface Science. Vol. 269, (2013), p.143-147 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations Campos, T.M.B., Da Silva Sobrinho, A.S., Pessoa, R.S., Maciel, H.S., Massi, M.: Materials Research 17 (2014), pp. 472-476 LEAL, G. - CAMPOS, T.M.B. - SOBRINHO, A.S.D. - PESSOA, R.S. - MACIEL, H.S. - MASSI, M. In MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS. MAR-APR 2014, vol. 17, no. 2, p. 472-476. DRINEK, V. - STRASAK, T. - NOVOTNY, F. - FAJGAR, R. - BASTL, Z. In APPLIED SURFACE SCIENCE. FEB 15 2014, vol. 292, p. 413-419. BARBOUCHE, M. - ZAGHOUANI, R.B. - BENAMMAR, N.E. - KHIROUNI, K. - TURAN, R. - EZZAOUIA, H. Impact of rapid thermal annealing on impurities removal efficiency from silicon carbide for optoelectronic applications. In INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY. ISSN 0268-3768, JAN 2020, vol. 106, no. 1-2, p. 731-739. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2013 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1016/j.apsusc.2012.09.086 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2013 2012 2.112 Q1 0.913 Q1
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