About electrical properties of passivated SiO2/Si structures prepared electro-chemically in HClO4 solutions

Number of the records: 1

Title	About electrical properties of passivated SiO2/Si structures prepared electro-chemically in HClO4 solutions
Author	Pinčík Emil 1956 SAVFYZIK - Fyzikálny ústav SAV ^ORCID Rusnák Jaroslav 1958 SAVFYZIK - Fyzikálny ústav SAV ^ORCID
	Brunner Róbert 1954 SAVFYZIK - Fyzikálny ústav SAV

Co-authors	Kobayashi H. Takahashi M.
Source document	Applied Surface Science. Vol. 269 (2013), p. 148-154
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	ANGERMANN, Heike. Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, 2014, vol. 312, pp. 3-16.
	STEGEMANN, Bert - GAD, Karim M. - BALAMOU, Patrice - SIXTENSSON, Daniel - VOESSING, Daniel - KASEMANN, Martin - ANGERMANN, Heike. Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, 2017, vol. 395, pp. 78-85.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2013
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1016/j.apsusc.2012.10.053

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2013	2012	2.112	Q1	0.913	Q1

Number of the records: 1