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Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region
Title Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region Author Jurkovič Michal SAVELEK - Elektrotechnický ústav SAV Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Palankovski V. Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Čičo Karol SAVELEK - Elektrotechnický ústav SAV Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Carlin J.-F. Grandjean N. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document IEEE Electron Device Letters. Vol. 34, (2013), p. 432-434 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations Marek, J. , Šatka, A., Donoval, D., Molnár, M., Priesol, J., Chvála, A., Pribytný, P. 2014 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 6998669, pp. 153-156 AHMADI, E. - SHIVARAMAN, R. - WU, F. - WIENECKE, S. - KAUN, S. W. - KELLER, S. - SPECK, J. S. - MISHRA, U. K. In APPLIED PHYSICS LETTERS. FEB 17 2014, vol. 104, no. 7. Nagy, L., Stopjaková, V., Šatka, A. Proceedings - 2015 IEEE 18th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2015 7195673, pp. 83-86 HUANG, H.L. - LIANG, Y.C. In SOLID-STATE ELECTRONICS. DEC 2015, vol. 114, p. 148-154. ZAIDI, Z.H. - LEE, K.B. - GUINEY, I. - QIAN, H. - JIANG, S. - WALLIS, D.J. - HUMPHREYS, C.J. - HOUSTON, P.A. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. OCT 2015, vol. 30, no. 10. LEE, G.Y. - TU, P.T. - CHYI, J.I. In APPLIED PHYSICS EXPRESS. JUN 2015, vol. 8, no. 6. DIMITRIJEV, S. - HAN, J.S. - MOGHADAM, H.A. - AMINBEIDOKHTI, A. In MRS BULLETIN. MAY 2015, vol. 40, no. 5, p. 399-405. LEE, K.B. - GUINEY, I. - JIANG, S. - ZAIDI, Z.H. - QIAN, H.T. - WALLIS, D.J. - UREN, M.J. - KUBALL, M. - HUMPHREYS, C.J. - HOUSTON, P.A. In APPLIED PHYSICS EXPRESS. MAR 2015, vol. 8, no. 3. 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In 2017 INTERNATIONAL CONFERENCE ON INNOVATIONS IN ELECTRICAL, ELECTRONICS, INSTRUMENTATION AND MEDIA TECHNOLOGY (ICIEEIMT). 2017, p. 293-296. CHEN, P.G. - TANG, M. - LIAO, M.H. - LEE, M.H. In SOLID-STATE ELECTRONICS. MAR 2017, vol. 129, p. 206-209. FREEDSMAN, J.J. - HAMADA, T. - MIYOSHI, M. - EGAWA, T. In IEEE ELECTRON DEVICE LETTERS. APR 2017, vol. 38, no. 4, p. 497-500. GUPTA, Suraj - MISHRA, S. N. - JENA, K. DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT. In International Conference on Signal Processing, Communication, Power and Embedded System, SCOPES 2016 Proceedings, 2017-06-22, pp. 1777-1780. CHEN, P.G. - CHEN, K.T. - TANG, M. - WANG, Z.Y. - CHOU, Y.C. - LEE, M.H. Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications. In SENSORS. SEP 2018, vol. 18, no. 9. WEI, L.C. - WANG, Q. - FENG, C. - XIAO, H.L. - JIANG, L.J. - WANG, C.M. - LI, W. - WANG, X.L. - LIU, F.Q. - XU, X.G. - WANG, Z.G. Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer. In JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. NOV 2018, vol. 18, no. 11, p. 7400-7404. SMITH, M.D. - LI, X. - UREN, M.J. - THAYNE, I.G. - KUBALL, M. Polarity dependence in Cl-2-based plasma etching of GaN, AlGaN and AlN. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, AUG 15 2020, vol. 521. JIANG, Yang - DU, Fangzhou - QIAO, Zepeng - CHENG, Wei Chih - HE, Jiaqi - TANG, Xinyi - LIU, Feifei - WEN, Lei - WANG, Qing - YU, Hongyu. InAlN/GaN HEMTs on Si with 0.18-Ω•mm Contact Resistance and 2.1-A/mm Drain Current Density. In Proceedings of International Conference on ASIC. ISSN 21627541, 2021-01-01, pp. Dostupné na: https://doi.org/10.1109/ASICON52560.2021.9620249. TOPRAK, A. - YILMAZ, D. - OZBAY, E. Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology. In MATERIALS RESEARCH EXPRESS. DEC 2021, vol. 8, no. 12. SARKAR, S. - KHADE, R.P. - DASGUPTA, A. - DASGUPTA, N. Effect of GaN cap layer on the performance of AlInN/GaN-based HEMTs. In MICROELECTRONIC ENGINEERING. ISSN 0167-9317, APR 1 2022, vol. 258. Dostupné na: https://doi.org/10.1016/j.mee.2022.111756. SINGH, J. - VERMA, A. - TEWARI, V.K. - SINGH, S. Design and Parametric Analysis of GaN on Silicon High Electron Mobility Transistor for RF Performance Enhancement. In SILICON. ISSN 1876-990X, JUL 2022, vol. 14, no. 11, p. 6311-6319. Dostupné na: https://doi.org/10.1007/s12633-021-01419-3. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2013 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1109/LED.2013.2241388 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2013 2012 2.789 Q1 1.998 Q1
Number of the records: 1