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Zr2/InAlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with InAlN barrier of different compositions

  1. TitleZr2/InAlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with InAlN barrier of different compositions
    Author Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV

    Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV

    Jurkovič Michal SAVELEK - Elektrotechnický ústav SAV

    Carlin J.-F.

    Grandjean N.

    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV

    Source document Japanese Journal of Applied Physics. Vol. 52, (2013), 08JN07
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsSCHAEFER, A. - BESMEHN, A. - LUYSBERG, M. - WINDEN, A. - STOICA, T. - SCHNEE, M. - ZANDER, W. - NIU, G. - SCHROEDER, T. - MANTL, S. - HARDTDEGEN, H. - MIKULICS, M. - SCHUBERT, J. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. JUL 2014, vol. 29, no. 7.
    FREEDSMAN, J.J. - WATANABE, A. - URAYAMA, Y. - EGAWA, T. In APPLIED PHYSICS LETTERS. SEP 7 2015, vol. 107, no. 10.
    LIU, H.Y. - OU, W.C. - HSU, W.C. In IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. SEP 2016, vol. 4, no. 5, p. 358-364.
    DUAN, T.L. - LIU, Z.H. In GALLIUM NITRIDE POWER DEVICES. 2017, p. 145-191.
    CHEN, Fan - ZHANG, Lin-Qing - WANG, Peng-Fei. AlN/GaN HEMT with Gate Insulation and Current Collapse Suppression Using Thermal ALD ZrO2. In JOURNAL OF ELECTRONIC MATERIALS. ISSN 0361-5235, 2019, vol. 48, no. 11, pp.
    CUI, P. - ZHANG, J. - JIA, M. - LIN, G.Y. - WEI, L.C. - ZHAO, H.C. - GUNDLACH, L. - ZENG, Y.P. InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, FEB 1 2020, vol. 59, no. 2.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2013
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201320121.067Q30.503
Number of the records: 1  

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