Enhanced sensitivity of Pt/NiO gate based AlGaN/GaN C-HEMT hydrogen sensor

Number of the records: 1

Title	Enhanced sensitivity of Pt/NiO gate based AlGaN/GaN C-HEMT hydrogen sensor
Author	Rýger Ivan 1987 SAVELEK - Elektrotechnický ústav SAV
Co-authors	Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV
	Dzuba Jaroslav 1987 SAVELEK - Elektrotechnický ústav SAV
	Vallo Martin SAVELEK - Elektrotechnický ústav SAV
	Kunzo Pavol 1985 SAVELEK - Elektrotechnický ústav SAV
	Vávra Ivo 1949 SAVELEK - Elektrotechnický ústav SAV

Source document	Key Engineering Materials. Vol. 605, (2014), p. 491-494
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	AJAYAN, J. - NIRMAL, D. - RAMESH, R. - BHATTACHARYA, Sandip - TAYAL, Shubham - JOSEPH, L. M. I. Leo - THOUTAM, Laxman Raju - AJITHA, D. A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H-2) sensors for aerospace and industrial applications. In MEASUREMENT, 2021, vol. 186, no., pp. ISSN 0263-2241. Dostupné na: https://doi.org/10.1016/j.measurement.2021.110100.
Category	ADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2014
Registered in	WOS
Registered in	SCOPUS
DOI	10.4028/www.scientific.net/KEM.605.491

article

Title

Characterization of epitaxial LSMO films grown on STO substrates

Author

Španková Marianna 1969 SAVELEK - Elektrotechnický ústav SAV

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	N

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2014	2013			0.190	Q3

Number of the records: 1