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RIE plasma etching of GaAs in SiCl4 and CCl4 gases with different resists as etch masks

  1. TitleRIE plasma etching of GaAs in SiCl4 and CCl4 gases with different resists as etch masks
    Author Hrkút Pavol 1948- SAVINFO - Ústav informatiky SAV    SCOPUS    RID
    Co-authors Andok Robert 1973- SAVINFO - Ústav informatiky SAV    SCOPUS    RID    ORCID

    Benčurová Anna 1966- SAVINFO - Ústav informatiky SAV    SCOPUS    RID

    Nemec Pavol 1975- SAVINFO - Ústav informatiky SAV    SCOPUS    RID

    Konečníková Anna 1955- SAVINFO - Ústav informatiky SAV    SCOPUS    RID

    Matay Ladislav 1950- SAVINFO - Ústav informatiky SAV    SCOPUS    RID

    Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV

    Source document / Vajda J. ; Jamnický I. Proceedings of the 20th International Conference on Applied Physics of Condensed Matter : APCOM 2014. P. 312-315. - Bratislava : FEI STU, 2014 ; International Conference on Applied Physics of Condensed Matter APCOM 2014
    Languageslo - Slovak
    Document kindrozpis článkov z periodík (rzb)
    CategoryAFD - Published papers from domestic scientific conferences
    Year2014
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2014
Number of the records: 1  

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