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Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator

  1. TitleTrapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator
    Author Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV

    Marek J.

    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV

    Source document Semiconductor Science and Technology. Vol. 29, (2014), 045003
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsYATABE, Z. - HORI, Y. - MA, W.C. - ASUBAR, J.T. - AKAZAWA, M. - SATO, T. - HASHIZUME, T. In JAPANESE JOURNAL OF APPLIED PHYSICS. OCT 2014, vol. 53, no. 10.
    STUCHLIKOVA, L. - KOSA, A. - JAKUS, J. - SUSOLIAK, M. - DONOVAL, D. - HRBACEK, J. In 10TH EUROPEAN WORKSHOP ON MICROELECTRONICS EDUCATION (EWME). 2014, p. 116-119.
    YATABE, Z. - ASUBAR, J.T. - HASHIZUME, T. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. OCT 5 2016, vol. 49, no. 39.
    MEKNI, O. - GOEURIOT, D. - DAMAMME, G. - RAOUADI, K. - SAO, S.J. - MEUNIER, C. - ASKRI, B. - AOUFI, A. In CERAMICS INTERNATIONAL. MAY 15 2016, vol. 42, no. 7, p. 8729-8737.
    MEKNI, O. - GOEURIOT, D. - SAO, S.J. - MEUNIER, C. - ASKRI, B. - RAOUADI, K. - DAMAMME, G. In DIELECTRIC MATERIALS AND APPLICATIONS, ISYDMA '2016. 2016, vol. 1, p. 167-170.
    MEKNI, O. - GOEURIOT, D. - SAO, S.J. - MEUNIER, C. - DAMAMME, G. - MEKNI, O. - RAOUADI, K. In 2016 IEEE INTERNATIONAL CONFERENCE ON DIELECTRICS (ICD), VOLS 1-2. 2016, p. 139-142.
    JIANG, Huaxing - LIU, Chao - CHEN, Yuying - TANG, Chak Wah - LAU, Kei May. Low leakage high breakdown GaN MOSHEMTs on Si with a ZrOinf2/infgate dielectric. In CS MANTECH 2017 2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017-01-01, pp.
    HASHIZUME, T. - NISHIGUCHI, K. - KANEKI, S. - KUZMIK, J. - YATABE, Z. State of the art on gate insulation and surface passivation for GaN-based power HEMTs. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. MAY 2018, vol. 78, p. 85-95.
    TOUATI, Z. - HAMAIZIA, Z. - MESSAI, Z. Study of AlGaN/GaN MOS-HEMTs with TiO2 gate dielectric and regrown source/drain. In JOURNAL OF NEW TECHNOLOGY AND MATERIALS. DEC 2018, vol. 8, no. 2, p. 16-23.
    DUTTA GUPTA, Sayak - JOSHI, Vipin - ROY CHAUDHURI, Rajarshi - SHRIVASTAVA, Mayank. Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors. In JOURNAL OF APPLIED PHYSICS, 2021, vol. 130, no. 1, pp. ISSN 0021-8979. Dostupné na: https://doi.org/10.1063/5.0053982.
    ZHANG, Y. - XU, L.H. - GU, Y.T. - GUO, H.W. - JIANG, H.X. - LAU, K.M. - ZOU, X.B. Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer. In IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. ISSN 2168-6734, 2022, vol. 10, p. 540-546. Dostupné na: https://doi.org/10.1109/JEDS.2022.3189819.
    HEBALI, K. - BOUGUENNA, D. - BELOUFA, A. - LOAN, S.A. Performance Analysis of GaN/AlGaN/AlN/GaN MIS-MODFETs with High-κ as Gate Dielectric Insulator Layer. In TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS. ISSN 1229-7607, JUN 2023, vol. 24, no. 3, p. 250-257. Dostupné na: https://doi.org/10.1007/s42341-023-00442-y.
    MANJUNATH, V. - CHALAPATHI, U. - REDDY, B.P. - AHN, C.H. - PARK, S.H. Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfOsub2/sub/Gasub2/subOsub3/sub/n-GaN MOS junction. In JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. ISSN 0957-4522, MAR 2023, vol. 34, no. 9. Dostupné na: https://doi.org/10.1007/s10854-023-10149-8.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2014
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1088/0268-1242/29/4/045003
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201420132.206Q11.173Q1
Number of the records: 1  

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