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Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications
Title Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Válik Lukáš 1990 SAVELEK - Elektrotechnický ústav SAV Kotara P. Zhytnytska R. Brunner F. Hilt O. Bahat-Treidel E. Würfl H.-J. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document ASDAM 2014 : The 10th International Conference on Advanced Semiconductor Devices and Microsystems. P. 121-124. - : IEEE, 2014 / Breza Juraj ; Donoval Daniel ; Vavrinský E. Language slo - Slovak Document kind rozpis článkov z periodík (rzb) Citations ROSSETTO, I. - MENEGHINI, M. - RIZZATO, V. - RUZZARIN, M. - FAVARON, A. - STOFFELS, S. - VAN HOVE, M. - POSTHUMA, N. - WU, T.L. - MARCON, D. - DECOUTERE, S. - MENEGHESSO, G. - ZANONI, E. In MICROELECTRONICS RELIABILITY. SEP 2016, vol. 64, SI, p. 547-551. BISI, Davide - ROSSETTO, Isabella - MENEGHINI, Matteo - MENEGHESSO, Gaudenzio - ZANONI, Enrico. Reliability in III-nitride devices. In Handbook of GaN Semiconductor Materials and Devices, 2017-01-01, pp. 367-430. Category AFC - Published papers from foreign scientific conferences Year 2014 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2014
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