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Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations
Title Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Jurkovič Michal SAVELEK - Elektrotechnický ústav SAV Válik Lukáš 1990 SAVELEK - Elektrotechnický ústav SAV Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Brunner F. Cho E.-M. Hashizume T. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Journal of Applied Physics. Vol. 116, (2014), 104501 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations QIN, X.Y. - WALLACE, R.M. In APPLIED PHYSICS LETTERS. AUG 24 2015, vol. 107, no. 8. HE, Y.L. - LI, P.X. - WANG, C. - LI, X.D. - ZHAO, S.L. - MI, M.H. - PEI, J.Q. - ZHANG, J.C. - MA, X.H. - HAO, Y. In APPLIED PHYSICS LETTERS. AUG 10 2015, vol. 107, no. 6. QIN, X.Y. - CHENG, L.X. - MCDONNELL, S. - AZCATL, A. - ZHU, H. - KIM, J.Y. - WALLACE, R.M. In JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. JUL 2015, vol. 26, no. 7, SI, p. 4638-4643. ZHU, J.J. - MA, X.H. - XIE, Y. - HOU, B. - CHEN, W.W. - ZHANG, J.C. - HAO, Y. In IEEE TRANSACTIONS ON ELECTRON DEVICES. FEB 2015, vol. 62, no. 2, p. 512-518. LE, S.P. - UI, T. - NGUYEN, T.Q. - SHIH, H.A. - SUZUKI, T. In JOURNAL OF APPLIED PHYSICS. MAY 28 2016, vol. 119, no. 20. WINZER, A. - SCHUSTER, M. - HENTSCHEL, R. - OCKER, J. - MERKEL, U. - JAHN, A. - WACHOWIAK, A. - MIKOLAJICK, T. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. MAY 2016, vol. 213, no. 5, p. 1246-1251. ZHU, J.J. - MA, X.H. - CHEN, W.W. - HOU, B. - XIE, Y. - HAO, Y. In JAPANESE JOURNAL OF APPLIED PHYSICS. MAY 2016, vol. 55, no. 5, SI. DUTTA, G. - DASGUPTA, N. - DASGUPTA, A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. APR 2016, vol. 63, no. 4, p. 1450-1458. 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OCT 4 2017, vol. 50, no. 39. ZHU, J.J. - HOU, B. - CHEN, L.X. - ZHU, Q. - YANG, L. - ZHOU, X.W. - ZHANG, P. - MA, X.H. - HAO, Y. Threshold Voltage Shift and Interface/Border Trapping Mechanism in Al2O3/AlGaN/GaN MOS-HEMTs. In 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2018. LE, S.P. - NGUYEN, D.D. - SUZUKI, T. Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics. In JOURNAL OF APPLIED PHYSICS. JAN 21 2018, vol. 123, no. 3. UPADHYAY, B.B. - TAKHAR, K. - JHA, J. - GANGULY, S. - SAHA, D. Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs. In SOLID-STATE ELECTRONICS. MAR 2018, vol. 141, p. 1-6. KIM, T.S. - LIM, S.Y. - PARK, Y.K. - JUNG, G. - SONG, J.H. - CHA, H.Y. - HAN, S.W. Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation. In JOURNAL OF THE KOREAN PHYSICAL SOCIETY. JUN 2018, vol. 72, no. 11, p. 1332-1336. VERMA, S. - LOAN, S.A. - ALHARBI, A.G. Polarization engineered enhancement mode GaN HEMT: Design and investigation. In SUPERLATTICES AND MICROSTRUCTURES. JUL 2018, vol. 119, p. 181-193. SATO, T. - URYU, K. - OKAYASU, J. - KIMISHIMA, M. - SUZUKI, T. Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETs. In APPLIED PHYSICS LETTERS. AUG 6 2018, vol. 113, no. 6. ANVARI, R. - SPAGNOLI, D. - UMANA-MEMBRENO, G.A. - PARISH, G. - NENER, B. Theoretical study of the influence of surface effects on GaN-based chemical sensors. In APPLIED SURFACE SCIENCE. SEP 15 2018, vol. 452, p. 75-86. ANVARI, R. - SPAGNOLI, D. - UMANA-MEMBRENO, G.A. - PARISH, G. - NENER, B. Effect of pH and structure on the channel conductivity of AlGaN/GaN heterostructure based sensors. In SENSORS AND ACTUATORS B-CHEMICAL. SEP 15 2018, vol. 269, p. 62-69. ACURIO, Eliana - CRUPI, Felice - RONCHI, Nicolo - DE JAEGER, Brice - BAKEROOT, Benoit - DECOUTERE, Stefaan - TROJMAN, Lionel. Influence of GaN- and Si3N4-Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, 2019, vol. 66, no. 2, pp. 883-889. CAI, Y.T. - LIU, W. - CUI, M. - SUN, R.Z. - LIANG, Y.C. - WEN, H.Q. - YANG, L. - SUPARDAN, S.N. - MITROVIC, I.Z. - TAYLOR, S. - CHALKER, P.R. - ZHAO, C.Z. Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, APR 1 2020, vol. 59, no. 4. MIYAMOTO, H. - OKAMOTO, Y. - NAKAYAMA, T. - KAWAGUCHI, H. - FUJITA, M. - UEDA, T. - SAWADA, M. Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by AlxGa1-xN back barrier. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, APR 1 2020, vol. 59, no. 4. NGUYEN, D.D. - SUZUKI, T.K. Interface charge engineering in AlTiO/AlGaN/GaN metal-insulator-semiconductor devices. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, MAR 7 2020, vol. 127, no. 9. RAJA, P.V. - SUBRAMANI, N.K. - GAILLARD, F. - BOUSLAMA, M. - SOMMET, R. - NALLATAMBY, J.C. Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y-21 Frequency Dispersion Properties. In ELECTRONICS. DEC 2021, vol. 10, no. 24. JIN, E.N. - DOWNEY, B.P. - GOKHALE, V.J. - ROUSSOS, J.A. - HARDY, M.T. - GROWDEN, T.A. - NEPAL, N. - KATZER, D.S. - CALAME, J.P. - MEYER, D.J. Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures. In APL MATERIALS. ISSN 2166-532X, NOV 1 2021, vol. 9, no. 11. NGUYEN, D.D. - ISODA, T. - DENG, Y.C. - SUZUKI, T.K. Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, JUL 7 2021, vol. 130, no. 1. SONG, Y.L. - REDDY, M.K. - CHANG, L.M. - SHEU, G. Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps. In MICROMACHINES. JUL 2021, vol. 12, no. 7. BORDOLOI, S. - RAY, A. - TRIVEDI, G. Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification. In IEEE ACCESS. ISSN 2169-3536, 2021, vol. 9, p. 99828-99841. CALZOLARO, A. - MIKOLAJICK, T. - WACHOWIAK, A. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices. In MATERIALS. FEB 2022, vol. 15, no. 3. Dostupné na: https://doi.org/10.3390/ma15030791. SUN, N. - HUANG, H.L. - SUN, Z.H. - WANG, R.H. - LI, S.X. - TAO, P.C. - REN, Y.S. - SONG, S.K. - WANG, H.Z. - LI, S.Q. - CHENG, W.X. - LIANG, H.A. Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, JAN 2022, vol. 69, no. 1, p. 82-87. Dostupné na: https://doi.org/10.1109/TED.2021.3131118. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2014 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1063/1.4894703 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2014 2013 2.185 Q2 1.165 Q1
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