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The influence of technology and switching parameters on resistive switching behavious of Pt/HfO2/TiN MIM structures
Title The influence of technology and switching parameters on resistive switching behavious of Pt/HfO2/TiN MIM structures Author Paskaleva A. Co-authors Hudec Boris SAVELEK - Elektrotechnický ústav SAV ORCID Jančovič Peter 1990 SAVELEK - Elektrotechnický ústav SAV Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Spassov D. Source document Facta universitatis : series: Electronics and Energetics. Vol. 27, (2014), p. 621-630 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations ATTARIMASHALKOUBEH, H. - LEBLEHICI, Y. In-depth Structure and Electrical Characteristics Study of HfOx-based Resistive Random Access Memories (ReRAMs). In 2019 IEEE 31ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL 2019). ISSN 2159-1660, 2019, p. 79-82. Category ADEB - Scientific papers in other foreign journals not registered in Current Contents Connect without IF (non-impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2014 article
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