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Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps
Title Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Source document Materials science in semiconductor processing. Vol. 31, (2015), p. 525-529 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations ZIANE, A. - AMRANI, M. - BENAMARA, Z. - RABEHI, A. Modeling and Simulation of Capacitance-Voltage Characteristics of a Nitride GaAs Schottky Diode. In JOURNAL OF ELECTRONIC MATERIALS. SEP 2018, vol. 47, no. 9, p. 5283-5290. HOSHII, Takuya - NAKAJIMA, Akira - NISHIZAWA, Shin-ichi - OHASHI, Hiromichi - KAKUSHIMA, Kuniyuki - WAKABAYASHI, Hitoshi - TSUTSUI, Kazuo. Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, 2019, vol. 58, no. 6, pp. MAO, W. - XU, S.H. - WANG, H.Y. - YANG, C. - ZHAO, S.L. - CHEN, J.B. - ZHANG, Y.C. - ZHANG, C.F. - ZHANG, J.C. - HAO, Y. Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, JAN 1 2022, vol. 15, no. 1. Dostupné na: https://doi.org/10.35848/1882-0786/ac44cb. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2015 Registered in WOS Registered in CCC DOI 10.1016/j.mssp.2014.11.052 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2015 2014 1.955 Q2 0.554 Q2
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