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New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology
Title New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology Author Mironov O.A. Co-authors Hassan A.H.A. Uhlarz M. Kiatgamolchai S. Dobbie A. Morris R.J.H. Halpin J.E. Rhead S.D. Allred P. Myronov M. Gabáni Slavomír 1974- SAVEXFYZ - Ústav experimentálnej fyziky SAV RID RID ORCID Berkutov I.B. Leadley D.R. Source document Physica status solidi C. Current topics in solid state physics. Vol. 11, no. 1 (2014), p. 61-64 Language eng - English Document kind rozpis článkov z periodík (rbx) Category ADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2014 Registered in WOS Registered in SCOPUS DOI 10.1002/pssc.201300164 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore N rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2014 2013 0.439 Q3
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