Modeling of the switching I-V characteristics in ultrathin (5nm) atomic layer deposited HfO2 films using the logistic hysteron

Number of the records: 1

Title	Modeling of the switching I-V characteristics in ultrathin (5nm) atomic layer deposited HfO2 films using the logistic hysteron
Author	Blasco J.
Co-authors	Jančovič Peter 1990 SAVELEK - Elektrotechnický ústav SAV
	Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Suñé J.
	Miranda E.

Source document	Journal of Vacuum Science and Technology B. Vol. 33, (2015), 01A102, Microelectronics and Nanometer Structures
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	KIM, M.H. - KIM, S. - RYOO, K.C. - CHO, S. - PARK, B.G. Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model. In JOURNAL OF COMPUTATIONAL ELECTRONICS. MAR 2018, vol. 17, no. 1, p. 273-278.
	LIN, Albert S. - PRATIK, Sparsh - OTA, Jun - RAWAT, Tejender Singh - HUANG, Tzu-Hsiang - HSU, Chun-Ling - SU, Wei-Ming - TSENG, Tseung-Yuen. A Process-Aware Memory Compact-Device Model Using Long-Short Term Memory. In IEEE ACCESS, 2021, vol. 9, no., pp. 3126-3139. ISSN 2169-3536. Dostupné na: https://doi.org/10.1109/ACCESS.2020.3047491.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2015
Registered in	WOS
Registered in	CCC
DOI	10.1116/1.4900599

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2015	2014	1.464	Q2	0.509	Q2

Number of the records: 1