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Resistive switching in nonplanar HfO2-based structures with variable series resistance
Title Resistive switching in nonplanar HfO2-based structures with variable series resistance Author Čičo Karol SAVELEK - Elektrotechnický ústav SAV Co-authors Jančovič Peter 1990 SAVELEK - Elektrotechnický ústav SAV Dérer Ján 1948 SAVELEK - Elektrotechnický ústav SAV Šmatko Vasilij 1949 SAVELEK - Elektrotechnický ústav SAV Rosová Alica 1962 SAVELEK - Elektrotechnický ústav SAV ORCID Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Hudec Boris SAVELEK - Elektrotechnický ústav SAV ORCID Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Journal of Vacuum Science and Technology B. Vol. 33, (2015), 01A108, Microelectronics and Nanometer Structures Language eng - English Document kind rozpis článkov z periodík (rbx) Citations HARDTDEGEN, A. - LA TORRE, C. - ZHANG, H. - FUNCK, C. - MENZEL, S. - WASER, R. - HOFFMANN-EIFERT, S. In 2016 IEEE 8TH INTERNATIONAL MEMORY WORKSHOP (IMW). 2016. HARDTDEGEN, A. - LA TORRE, C. - CUPPERS, F. - MENZEL, S. - WASER, R. - HOFFMANN-EIFERT, S. Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiOX Bilayer ReRAM Cells. In IEEE TRANSACTIONS ON ELECTRON DEVICES. AUG 2018, vol. 65, no. 8, p. 3229-3236. LIN, Chih-Yang - PAN, Chih-Hung - CHEN, Po-Hsun - CHANG, Ting-Chang - TSAI, Tsung-Ming - CHEN, Chun-Kuei - LIN, Yun-Hsuan - HUANG, Wei-Chen - LIN, Chun-Chu - CHEN, Wen-Chung. Predicting voltage induced positive-feedback effect on dynamic reset behavior in resistance switching device. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, 2019, vol. 52, no. 9, pp. CUEPPERS, F. - MENZEL, S. - BENGEL, C. - HARDTDEGEN, A. - VON WITZLEBEN, M. - BOETTGER, U. - WASER, R. - HOFFMANN-EIFERT, S. Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior. In APL MATERIALS. ISSN 2166-532X, 2019, vol. 7, no. 9, pp. YANG, Jinwoong - CHO, Hyojong - RYU, Hojeong - ISMAIL, Muhammad - MAHATA, Chandreswar - KIM, Sungjun. Tunable Synaptic Characteristics of a Ti/TiOinf2/inf/Si Memory Device for Reservoir Computing. In ACS Applied Materials and Interfaces, 2021-07-21, 13, 28, pp. 33244-33252. ISSN 19448244. Dostupné na: https://doi.org/10.1021/acsami.1c06618. OSTROVSKII, V. - FEDOSEEV, P. - BOBROVA, Y. - BUTUSOV, D. Structural and Parametric Identification of Knowm Memristors. In NANOMATERIALS. JAN 2022, vol. 12, no. 1. Dostupné na: https://doi.org/10.3390/nano12010063. YAN, J.Q. - SONG, H.J. - ZHONG, X.L. - WANG, J.B. - GUO, H.X. - OUYANG, X.P. Effect of Proton Irradiation Fluence on the Linearity and Symmetry of Conductance Tuning of a HfOsubx/sub/TiOsubx/sub Heterojunction-Based Memristor. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. ISSN 0018-9499, MAY 2023, vol. 70, no. 5, p. 807-814. Dostupné na: https://doi.org/10.1109/TNS.2023.3267606. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2015 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1116/1.4905727 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2015 2014 1.464 Q2 0.509 Q2
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