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III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap

  1. TitleIII-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap
    Author Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Kúdela Róbert 1952 SAVELEK - Elektrotechnický ústav SAV

    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV

    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Gaži Štefan 1948 SAVELEK - Elektrotechnický ústav SAV

    Dérer Ján 1948 SAVELEK - Elektrotechnický ústav SAV

    Liday J.

    Vogrinčič P.

    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Source document Journal of Vacuum Science and Technology B. Vol. 33, (2015), 01A111, Microelectronics and Nanometer Structures
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2015
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1116/1.4905938
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201520141.464Q20.509Q2
Number of the records: 1  

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