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High resolution alpha particle detectors based on 4H-SiC epitaxial layer
Title High resolution alpha particle detectors based on 4H-SiC epitaxial layer Author Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Dubecký František 1946 SAVELEK - Elektrotechnický ústav SAV Šagátová A. Sedlačková K. Ryc L. Source document Journal of Instrumentation. Vol. 10, (2015), C04009 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations CHERNYKH, S.V. - CHERNYKH, A.V. - DIDENKO, S.I. - BARYSHNIKOV, F.M. - BURTEBAYEV, N. - BRITVICH, G.I. - CHUBENKO, A.P. - GULY, V.G. - GLYBIN, Y.N. - ZHOLDYBAYEV, T.K. - BURTEBAYEVA, J.T. - NASSURLLA, M. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT. FEB 11 2017, vol. 845, p. 52-55. LIU, L.Y. - LIU, J.L. - CHEN, L. - ZHANG, Z.B. - JIN, P. - RUAN, J.L. - CHEN, G. - LIU, A. - BAI, S. - OUYANG, X.P. In DIAMOND AND RELATED MATERIALS. MAR 2017, vol. 73, p. 177-181. TORRISI, L. - SCIUTO, A. - CANNAVO, A. - DI FRANCO, S. - MAZZILLO, M. - BADALA, P. - CALCAGNO, L. In JOURNAL OF ELECTRONIC MATERIALS. JUL 2017, vol. 46, no. 7, p. 4242-4249. SCIUTO, A. - TORRISI, L. - CANNAVO, A. - MAZZILLO, M. - CALCAGNO, L. In JOURNAL OF ELECTRONIC MATERIALS. NOV 2017, vol. 46, no. 11, p. 6403-6410. YE, X. - XIA, X.C. - LIANG, H.W. - LI, Z. - ZHANG, H.Q. - DU, G.T. - CUI, X.Z. - LIANG, X.H. Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection. In CHINESE PHYSICS B. AUG 2018, vol. 27, no. 8. CHERNYKH, A.V. - CHERNYKH, S.V. - DIDENKO, S.I. - BURTEBAEV, N. - NASURLLA, M. - NASURLLA, M. - BRITVICH, G.I. - CHUBENKO, A.P. - BARYSHNIKOV, F.M. - SLEPTSOV, E.V. GaAs Schottky Barrier Detectors for Alpha-Particle Spectrometry at Temperatures up to 120 degrees C. In TECHNICAL PHYSICS LETTERS. OCT 2018, vol. 44, no. 10, p. 942-945. ZHAO, S. - LIOLIOU, G. - BUTERA, S. - WHITAKER, M.D.C. - BARNETT, A.M. Electron spectroscopy with a commercial 4H-SiC photodiode. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT. DEC 1 2018, vol. 910, p. 35-40. TAYLOR, Neil R. - ALNAJJAR, Nora - JARRELL, Joshua - KANDLAKUNTA, Praneeth - SIMPSON, Michael - BLUE, Thomas E. - CAO, Lei R. Isotopic concentration of uranium from alpha spectrum of electrodeposited source on 4H-SiC detector at 500 degrees C. In JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY. ISSN 0236-5731, 2019, vol. 320, no. 2, pp. 441-449. CHAUDHURI, S.K. - KLEPPINGER, J.W. - MANDAL, K.C. Radiation detection using fully depleted 50 mu m thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z(1/2) and EH6/7 deep defects. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, SEP 21 2020, vol. 128, no. 11. SANDUPATLA, A. - ARULKUMARAN, S. - ING, N.G. - NITTA, S. - KENNEDY, J. - AMANO, H. Vertical GaN-on-GaN Schottky Diodes as alpha-Particle Radiation Sensors. In MICROMACHINES. MAY 2020, vol. 11, no. 5. JIA, Yuping - SHEN, Yutong - SUN, Xiaojuan - SHI, Zhiming - JIANG, Ke - WU, Tong - LIANG, Hongwei - CUI, Xingzhu - LU, Wei - LI, Dabing. Improved performance of SiC radiation detector based on metal-insulator-semiconductor structures. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2021, vol. 997, no., pp. ISSN 0168-9002. Dostupné na: https://doi.org/10.1016/j.nima.2021.165166. KLEPPINGER, Joshua W. - CHAUDHURI, Sandeep K. - KARADAVUT, OmerFaruk - MANDAL, Krishna C. Role of deep levels and barrier height lowering in current-flow mechanism in 150 mu m thick epitaxial n-type 4H-SiC Schottky barrier radiation detectors. In APPLIED PHYSICS LETTERS, 2021, vol. 119, no. 6, pp. ISSN 0003-6951. Dostupné na: https://doi.org/10.1063/5.0064036. KLEPPINGER, Joshua W. - CHAUDHURI, Sandeep K. - KARADAVUT, OmerFaruk - MANDAL, Krishna C. Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 mu m epitaxial layers. In JOURNAL OF APPLIED PHYSICS, 2021, vol. 129, no. 24, pp. ISSN 0021-8979. Dostupné na: https://doi.org/10.1063/5.0049218. CHAUDHURI, Sandeep K. - KARADAVUT, OmerFaruk - KLEPPINGER, Joshua W. - MANDAL, Krishna C. High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor. In JOURNAL OF APPLIED PHYSICS, 2021, vol. 130, no. 7, pp. ISSN 0021-8979. Dostupné na: https://doi.org/10.1063/5.0059151. YANG, Tiebin - LI, Feng - ZHENG, Rongkun. Recent advances in radiation detection technologies enabled by metal-halide perovskites. In MATERIALS ADVANCES, 2021, vol. 2, no. 21, pp. 6744-6767. Dostupné na: https://doi.org/10.1039/d1ma00569c. YANG, Q.S. - LIU, Q. - GUO, L.J. - HAO, S.C. - ZHOU, D. - XU, W.Z. - ZHANG, B.Q. - YANG, F. - REN, F.F. - CHEN, D.J. - ZHANG, R. - ZHENG, Y.D. - LU, H. High Resolution 4H-SiC p-i-n Radiation Detectors With Low-Voltage Operation. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, DEC 2022, vol. 43, no. 12, p. 2161-2164. Dostupné na: https://doi.org/10.1109/LED.2022.3217768. SHILPA, A. - SINGH, S. - MURTY, N.V.L.N. Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors. In JOURNAL OF INSTRUMENTATION. ISSN 1748-0221, NOV 2022, vol. 17, no. 11. Dostupné na: https://doi.org/10.1088/1748-0221/17/11/P11014. NAPOLI, M.D. SiC detectors: A review on the use of silicon carbide as radiation detection material. In FRONTIERS IN PHYSICS. ISSN 2296-424X, OCT 12 2022, vol. 10. Dostupné na: https://doi.org/10.3389/fphy.2022.898833. KARADAVUT, O. - CHAUDHURI, S.K. - KLEPPINGER, J.W. - NAG, R. - MANDAL, K.C. Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H-SiC through thermal oxidation. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, JUL 4 2022, vol. 121, no. 1. Dostupné na: https://doi.org/10.1063/5.0089236. CAPAN, I. 4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review. In ELECTRONICS. FEB 2022, vol. 11, no. 4. Dostupné na: https://doi.org/10.3390/electronics11040532. Chen, C., Jia, Y., Sun, X., Li, D.: SiC Radiation Detector Based on Metal- Insulator- Semiconductor Structures In Handbook of Silicon Carbide Materials and Devices (2023) pp. 403-417 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2015 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1088/1748-0221/10/04/C04009 
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